STD10NM60N datasheet, mosfet equivalent, ST Microelectronics

Features and benefits

TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. ID STD10NM60N 600 V 550 mΩ 10 A
* 100% avalanche tested
* Low input capacitance and gate charge
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Application

* Switching applications G(1) Description S(3) This device is an N-channel Power MOSFET developed using the secon.

Description

S(3) This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical AM01475v1_noZen structure to the company’s strip layout to yield one of the world’s lo.

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